Ga-doped indium oxide nanowire phase change random access memory cells.
Identifieur interne : 000172 ( Main/Exploration ); précédent : 000171; suivant : 000173Ga-doped indium oxide nanowire phase change random access memory cells.
Auteurs : RBID : pubmed:24406901Abstract
Phase change random access memory (PCRAM) devices are usually constructed using tellurium based compounds, but efforts to seek other materials providing desirable memory characteristics have continued. We have fabricated PCRAM devices using Ga-doped In2O3 nanowires with three different Ga compositions (Ga/(In+Ga) atomic ratio: 2.1%, 11.5% and 13.0%), and investigated their phase switching properties. The nanowires (∼40 nm in diameter) can be repeatedly switched between crystalline and amorphous phases, and Ga concentration-dependent memory switching behavior in the nanowires was observed with ultra-fast set/reset rates of 80 ns/20 ns, which are faster than for other competitive phase change materials. The observations of fast set/reset rates and two distinct states with a difference in resistance of two to three orders of magnitude appear promising for nonvolatile information storage. Moreover, we found that increasing the Ga concentration can reduce the power consumption and resistance drift; however, too high a level of Ga doping may cause difficulty in achieving the phase transition.
DOI: 10.1088/0957-4484/25/5/055205
PubMed: 24406901
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Ga-doped indium oxide nanowire phase change random access memory cells.</title><author><name sortKey="Jin, Bo" uniqKey="Jin B">Bo Jin</name><affiliation wicri:level="1"><nlm:affiliation>Division of IT-Convergence Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.</nlm:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Division of IT-Convergence Engineering, Pohang University of Science and Technology, Pohang</wicri:regionArea></affiliation></author><author><name sortKey="Lim, Taekyung" uniqKey="Lim T">Taekyung Lim</name></author><author><name sortKey="Ju, Sanghyun" uniqKey="Ju S">Sanghyun Ju</name></author><author><name sortKey="Latypov, Marat I" uniqKey="Latypov M">Marat I Latypov</name></author><author><name sortKey="Kim, Hyoung Seop" uniqKey="Kim H">Hyoung Seop Kim</name></author><author><name sortKey="Meyyappan, M" uniqKey="Meyyappan M">M Meyyappan</name></author><author><name sortKey="Lee, Jeong Soo" uniqKey="Lee J">Jeong-Soo Lee</name></author></titleStmt><publicationStmt><date when="2014">2014</date><idno type="doi">10.1088/0957-4484/25/5/055205</idno><idno type="RBID">pubmed:24406901</idno><idno type="pmid">24406901</idno><idno type="wicri:Area/Main/Corpus">000218</idno><idno type="wicri:Area/Main/Curation">000218</idno><idno type="wicri:Area/Main/Exploration">000172</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Phase change random access memory (PCRAM) devices are usually constructed using tellurium based compounds, but efforts to seek other materials providing desirable memory characteristics have continued. We have fabricated PCRAM devices using Ga-doped In2O3 nanowires with three different Ga compositions (Ga/(In+Ga) atomic ratio: 2.1%, 11.5% and 13.0%), and investigated their phase switching properties. The nanowires (∼40 nm in diameter) can be repeatedly switched between crystalline and amorphous phases, and Ga concentration-dependent memory switching behavior in the nanowires was observed with ultra-fast set/reset rates of 80 ns/20 ns, which are faster than for other competitive phase change materials. The observations of fast set/reset rates and two distinct states with a difference in resistance of two to three orders of magnitude appear promising for nonvolatile information storage. Moreover, we found that increasing the Ga concentration can reduce the power consumption and resistance drift; however, too high a level of Ga doping may cause difficulty in achieving the phase transition.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="In-Process"><PMID Version="1">24406901</PMID><DateCreated><Year>2014</Year><Month>01</Month><Day>14</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-6528</ISSN><JournalIssue CitedMedium="Internet"><Volume>25</Volume><Issue>5</Issue><PubDate><Year>2014</Year><Month>Feb</Month><Day>7</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>Ga-doped indium oxide nanowire phase change random access memory cells.</ArticleTitle><Pagination><MedlinePgn>055205</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/25/5/055205</ELocationID><Abstract><AbstractText>Phase change random access memory (PCRAM) devices are usually constructed using tellurium based compounds, but efforts to seek other materials providing desirable memory characteristics have continued. We have fabricated PCRAM devices using Ga-doped In2O3 nanowires with three different Ga compositions (Ga/(In+Ga) atomic ratio: 2.1%, 11.5% and 13.0%), and investigated their phase switching properties. The nanowires (∼40 nm in diameter) can be repeatedly switched between crystalline and amorphous phases, and Ga concentration-dependent memory switching behavior in the nanowires was observed with ultra-fast set/reset rates of 80 ns/20 ns, which are faster than for other competitive phase change materials. The observations of fast set/reset rates and two distinct states with a difference in resistance of two to three orders of magnitude appear promising for nonvolatile information storage. Moreover, we found that increasing the Ga concentration can reduce the power consumption and resistance drift; however, too high a level of Ga doping may cause difficulty in achieving the phase transition.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Jin</LastName><ForeName>Bo</ForeName><Initials>B</Initials><Affiliation>Division of IT-Convergence Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.</Affiliation></Author><Author ValidYN="Y"><LastName>Lim</LastName><ForeName>Taekyung</ForeName><Initials>T</Initials></Author><Author ValidYN="Y"><LastName>Ju</LastName><ForeName>Sanghyun</ForeName><Initials>S</Initials></Author><Author ValidYN="Y"><LastName>Latypov</LastName><ForeName>Marat I</ForeName><Initials>MI</Initials></Author><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Hyoung Seop</ForeName><Initials>HS</Initials></Author><Author ValidYN="Y"><LastName>Meyyappan</LastName><ForeName>M</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Lee</LastName><ForeName>Jeong-Soo</ForeName><Initials>JS</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2014</Year><Month>01</Month><Day>09</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanotechnology</MedlineTA><NlmUniqueID>101241272</NlmUniqueID><ISSNLinking>0957-4484</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2014</Year><Month>1</Month><Day>09</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2014</Year><Month>1</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2014</Year><Month>1</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2014</Year><Month>1</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1088/0957-4484/25/5/055205</ArticleId><ArticleId IdType="pubmed">24406901</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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